Anomalous hall effect in Mn δ-doped GaAs/In0.17Ga0.83As/GaAs quantum wells with high hole mobility
| Autor: | A. B. Davydov, P. V. Gurin, V. V. Rylkov, O. V. Vikhrova, Koji Onomitsu, Yoshiji Horikoshi, A. B. Granovskiĭ, Yu. A. Danilov, B. N. Zvonkov, V. A. Kulbachinskiĭ, B. A. Aronzon |
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| Rok vydání: | 2007 |
| Předmět: |
Physics
Condensed Matter::Materials Science Electron mobility Physics and Astronomy (miscellaneous) Magnetoresistance Condensed matter physics Hall effect Thermal Hall effect Curie temperature Magnetic semiconductor Quantum Hall effect Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Quantum well |
| Zdroj: | JETP Letters. 85:27-33 |
| ISSN: | 1090-6487 0021-3640 |
| DOI: | 10.1134/s0021364007010067 |
| Popis: | Magnetic and magnetotransport properties of GaAs(δ〈Mn〉)/In0.17Ga0.83As/GaAs quantum wells with different Mn concentrations are studied. The delta-doped manganese layer has been separated from the GaAs quantum well with a spacer with an optimal thickness (3 nm), which has provided a sufficiently high hole mobility (≥103 cm2V−1 s−1) in the quantum wells and their effective exchange with Mn atoms. It is found that the anomalous Hall effect (AHE) is exhibited only in a restricted temperature range above and below the Curie temperature, while the AHE is not observed in quantum wells with quasi-metallic conductivity. Thus, it is shown that the use of the AHE is inefficient in studying magnetic ordering in semiconductor systems with high-mobility carriers. The features observed in the behavior of the resistance, magnetoresistance, and Hall effect are discussed in terms of the interaction of holes with magnetic Mn ions with regard to fluctuations of their potential, hole transport on the percolation level, and hopping conduction. |
| Databáze: | OpenAIRE |
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