Temperature dependence of common-emitter I-V and collector breakdown voltage characteristics in AlGaAs/GaAs and AlInAs/GaInAs HBT's grown by MBE
| Autor: | A.Y. Cho, Kambiz Alavi, J. Nagle, R. W. Ryan, N. Chand, Roger J. Malik |
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| Rok vydání: | 1992 |
| Předmět: |
Materials science
business.industry Band gap Transconductance Heterojunction bipolar transistor Bipolar junction transistor Electrical engineering Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound chemistry Optoelectronics Breakdown voltage Electrical and Electronic Engineering business Molecular beam epitaxy Common emitter |
| Zdroj: | IEEE Electron Device Letters. 13:557-559 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/55.192838 |
| Popis: | Temperature-dependent measurements from 25 to 125 degrees C have been made of the DC I-V characteristics of HBTs with GaAs and In/sub 0.53/Ga/sub 0.47/As collector regions. It was found that the GaAs HBTs have very low output conductance and high collector breakdown voltage BV/sub CEO/>10 V at 25 degrees C, which increases with temperature. In striking contrast, the In/sub 0.53/Ga/sub 0.47/As HBTs have very high output conductance and low BV/sub CEO/ approximately 2.5 V at 25 degrees C, which actually decreases with temperature. This different behavior is explained by the >10/sup 4/ higher collector leakage current, I/sub CO/, in In/sub 0.53/Ga/sub 0.47/As compared to GaAs due to bandgap differences. It is also shown that device self-heating plays a role in the I-V characteristics. > |
| Databáze: | OpenAIRE |
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