Approach of TID-Measurements Using p-Channel MOSFETs and Its Software and Hardware Implementation
Autor: | L. V. Feoktistova, Yu. N. Barmakov, V. I. Butin, A. V. Butin |
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Rok vydání: | 2019 |
Předmět: | |
Zdroj: | 2019 International Siberian Conference on Control and Communications (SIBCON). |
DOI: | 10.1109/sibcon.2019.8729655 |
Popis: | In this paper a new approach of p-channel MOS-transistors using for total dose measurements during radiation tests is described and well founded. We perform the release based on microcontroller STM32 as a sensor of total ionization dose (TID). The device prototype and software were developed that realized a proposed algorithm. The prototype was experimentally tested at isotopic source. |
Databáze: | OpenAIRE |
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