Integration of unlanded via in a non-etchback SOG direct-on-metal approach in 0.25 micron CMOS process

Autor:	Karen Maex, Bart Coenegrachts, G. Beyer, H. Meynen, M. A. Van Hove, Teng Gao, Joost Waeterloos
Rok vydání:	2002
Předmět:	Materials science CMOS business.industry Etching Electronic engineering Optoelectronics Dielectric thin films business Cmos process Contact area Metals industry
Zdroj:	Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102).
DOI:	10.1109/iitc.1998.704747
Popis:	A novel approach of via integration with nonetchback (NEB) SOG is investigated to improve performance of unlanded vias, which is a serious problem if zero-overlap metal lines are used. The improvement is attributed to the larger contact area between the unlanded via and the underlying metal line. The direct-on-metal (DOM) technique is applied in order to achieve a superior contact between the via plug and the underlying metal line, even for a large misalignment. Several integration issues related to DOM and unlanded vias are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1142848c43872e6d332f4fdb0bf3f401 https://doi.org/10.1109/iitc.1998.704747 Zobrazit plný text záznamu