Research of Nano-Scaled Transition Metal Oxide Resistive Non-Volatile Memory (R-RAM)

Autor:	Hsin-Hau Huang, Min-Cheng Chen, Yi-Ping Hsieh, ChiaHua Ho, Chun-Chi Chen, Cho-Lun Hsu, Meiyi Li, Wen-Cheng Chiu, Lu-Mei Lu, Fu-Liang Yang, Ming-Taou Lee, Kai-Shin Li, Tung-Yen Lai, Bo-Wei Wu, Cheng-San Wu
Rok vydání:	2014
Předmět:	Non-volatile memory Resistive touchscreen chemistry.chemical_compound Materials science chemistry Transition metal Nano Oxide Nanotechnology Thermal management of electronic devices and systems Resistive random-access memory
Zdroj:	Advances in Multifunctional Materials and Systems II
DOI:	10.1002/9781118771402.ch13
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::11417e2f3fe6257539b2698826c739c2 https://doi.org/10.1002/9781118771402.ch13 Zobrazit plný text záznamu