High performance SOI RF switches for wireless applications

Autor:	Dawn Wang, David L. Harame, Alan B. Botula, Peter Rabbeni, James S. Dunn, Alvin J. Joseph, Randy L. Wolf, Myra Boenke
Rok vydání:	2010
Předmět:	Engineering business.industry Electrical engineering Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY High-electron-mobility transistor RF switch CMOS Silicon on sapphire Logic gate Hardware_INTEGRATEDCIRCUITS Electronic engineering Insertion loss Radio frequency business
Zdroj:	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.
DOI:	10.1109/icsict.2010.5667307
Popis:	This paper describes 0.18um CMOS silicon-on-insulator (SOI) technology and design techniques for SOI RF switch designs for wireless applications. The measured results of SP4T (single pole four throw) and SP8T (single pole eight throw) switch reference designs are presented. It has been demonstrated that SOI RF switch performance, in terms of power handling, linearity, insertion loss and isolation, is very competitive with those utilizing GaAs pHEMT and silicon-on-sapphire (SOS) technologies, while maintaining a cost and manufacturing advantage.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1130a7a8fa9aa3d6e5da68b307a3a4a2 https://doi.org/10.1109/icsict.2010.5667307 Zobrazit plný text záznamu