New shallow trench isolation scheme with α-Si absorption layer for sub-0.18 μm technology

Autor:	Sung-Eun Hong, Chung-Tae Kim, Si-Bum Kim, Sam-Dong Kim, Su-Jin Oh, Ja-Chun Ku, Hyeong-Soo Kim
Rok vydání:	2003
Předmět:	Thermal oxidation Materials science Silicon business.industry Oxide Analytical chemistry chemistry.chemical_element Nitride chemistry.chemical_compound Optics chemistry Shallow trench isolation Trench Wafer business Absorption (electromagnetic radiation)
Zdroj:	ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361).
DOI:	10.1109/icvc.1999.820847
Popis:	/spl alpha/-Si Absorption Layer (AL) was used in the sub 0.18 /spl mu/m Shallow Trench Isolation (STI) patterning to improve the pattern uniformity without additional removal step. It was confirmed by the results of reflectivity simulation at 248 nm that the thickness of /spl alpha/-Si for AL on the pad nitride was at least 10 nm to obtain uniform reflection to Photo Resist (PR). The pattern uniformity within 8" wafer was improved by a factor of 3 from 39 nm (3/spl sigma/) without AL to 14 nm (3/spl sigma/) with /spl alpha/-Si. This /spl alpha/-Si up to 15 nm was fully converted to the oxide after thermal oxidation steps to recover the damaged trench surface. Our results corroborate that the optimum thickness of CVD /spl alpha/-Si AL is 10/spl sim/15 nm for the sub-0.18 /spl mu/m STI process.
Databáze:	OpenAIRE
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