Analysis of Be doping of InGaP lattice matched to GaAs

Autor: Lisandro Pavie Cardoso, Richard Landers, A Silva Filho, Newton C. Frateschi, M.M.G. de Carvalho, Jefferson Bettini, Mônica A. Cotta, M. A. A. Pudenzi
Rok vydání: 2000
Předmět:
Zdroj: Journal of Crystal Growth. 208:65-72
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(99)00461-3
Popis: We present a study on the growth of Be-doped InGaP layers lattice matched to GaAs substrates by chemical beam epitaxy. We show that the presence of the dopant affects not only electrical but the structural properties — crystal quality and morphology — as well. For samples grown at higher temperatures, a saturation of the electrical carrier concentration is observed, associated to degradation of surface morphology and crystal quality. Our results suggest that at these higher temperatures the excess of Be atoms — which are not electrically active — are incorporated as microcrystals of Be 3 P 2 which may give rise to defects in the layers. Reducing the growth temperature can alter this scenario, resulting in Be-doped InGaP layers with improved crystal quality, planar morphology and no saturation in the electrical carrier concentration for Be concentrations up to 3×10 19 cm −3 .
Databáze: OpenAIRE
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