Real-Space Transfer and Trapping of Carriers into Single GaAs Quantum Wires Studied by Near-Field Optical Spectroscopy

Autor:	Thomas Elsaesser, A. Richter, M. Ramsteiner, K. H. Ploog, M. Süptitz, G. Behme, Ch. Lienau, R Richard Nötzel
Rok vydání:	1997
Předmět:	Physics Condensed Matter::Materials Science Electron mobility Condensed matter physics Phonon scattering Phonon Quantum wire General Physics and Astronomy Near and far field Trapping Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Spectroscopy Quantum
Zdroj:	Physical Review Letters. 79:2145-2148
ISSN:	1079-7114 0031-9007
DOI:	10.1103/physrevlett.79.2145
Popis:	We report the first near-field optical study of single GaAs quantum wires grown on patterned $(311)A$ GaAs surfaces. Spatially resolved optical spectra at a temperature of 10 K give evidence for one-dimensional carrier confinement and subband structure. At 300 K, electron-hole pairs in continuum states undergo diffusive real-space transfer over a length of several microns determined by hole mobility and trapping by optical phonon emission. Optical phonon scattering of carriers in the quantum wire establishes a quasiequilibrium carrier distribution in both wire and continuum states.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::110f8ce3cffbcc119773b3d83040c4b2 https://doi.org/10.1103/physrevlett.79.2145 Zobrazit plný text záznamu