Fabrication of narrow pulse passively Q-switched self-stimulated Raman laser with c-cut Nd:GdVO4
| Autor: | Gao Shen, Ming Han, Zuo-han Li |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
02 engineering and technology 01 natural sciences law.invention 010309 optics symbols.namesake Optics law 0103 physical sciences Laser power scaling Electrical and Electronic Engineering business.industry Energy conversion efficiency Saturable absorption 021001 nanoscience & nanotechnology Condensed Matter Physics Laser Q-switching Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Pulse (physics) Picosecond symbols 0210 nano-technology business Raman scattering |
| Zdroj: | Optoelectronics Letters. 12:430-432 |
| ISSN: | 1993-5013 1673-1905 |
| Popis: | Combining the self-stimulated Raman scattering technology and saturable absorber of Cr4+:YAG, a 1.17 μm c-cut Nd:GdVO4 picosecond Q-switched laser is demonstrated in this paper. With an incident pump power of 10 W, the Q-switched laser with average power of 430 mW for 1.17 μm, pulse width of 270 ps, repetition rate of 13 kHz and the first order Stokes conversion efficiency of 4.3% is obtained. The Q-switched pulse width can be the narrowest in our research. In addition, the yellow laser at 0.58 μm is also achieved by using the LiB3O5 frequency doubling crystal. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink