Sol-gel/drop-coated micro-thick TiO2 memristors for γ-ray sensing
| Autor: | Heba Abunahla, Baker Mohammad, Curtis J. O'Kelly, Maguy Abi Jaoude |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Passivation Doping chemistry.chemical_element Nanotechnology 02 engineering and technology engineering.material 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Copper Amorphous solid chemistry Chemical engineering Coating 0103 physical sciences Electrode engineering General Materials Science Work function Thin film 0210 nano-technology |
| Zdroj: | Materials Chemistry and Physics. 184:72-81 |
| ISSN: | 0254-0584 |
| DOI: | 10.1016/j.matchemphys.2016.09.027 |
| Popis: | Sol-gel/drop-coated micro-thick TiO 2 memristors were investigated and developed for low-power radiation sensing. Devices constructed with coated aluminum (Al) electrodes exhibited unipolar I-V characteristics with dynamic turn-on voltage, and progressive R OFF /R ON ratio loss under applied bias. Endurance failure of micro-thick Al/Al stacks is ascribed to gradual passivation of Al surface resulting from an electrically-enhanced oxygen-ion diffusion. By exchanging a single Al contact with higher work function copper (Cu) metal, two distinct superimposed TiO 2 phases were formed. The TiO 2 coating on Al surface was carbon-contaminated and amorphous, while that on Cu was found to be additionally doped with Cu (I/II) ions resulting from the corrosion of the surface of the electrode by the amine-based gelation agent. After initial forming, the hybrid stack could achieve a bipolar memristance, with high R OFF /R ON (up to 10 6 ), and over 10 switching cycles at low-operating voltages (±1 V). The enhanced memristive switching properties of Al/Cu devices are explained via cooperative valence-change/electrochemical-metallization processes, involving migration of oxygen and copper species. The advanced micro-thick TiO 2 memristors were exposed to Cs-137 γ-rays, providing for the first time initial insights into their radiation detection capabilities. The sensing mechanism through these devices could be actuated by synergistic radiation-induced and field-driven photo-electric effects. |
| Databáze: | OpenAIRE |
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