Enhanced ambipolar in‐plane transport in an InAs/GaAs hetero‐n‐i‐p‐i

Autor:	Alexander N. Cartwright, T. C. Hasenberg, D. S. McCallum, Thomas F. Boggess, X. R. Huang, Arthur L. Smirl
Rok vydání:	1993
Předmět:	Ambipolar diffusion Chemistry business.industry Analytical chemistry General Physics and Astronomy Heterojunction Electron Grating Molecular physics Photoexcitation Condensed Matter::Materials Science Semiconductor Picosecond business Quantum well
Zdroj:	Journal of Applied Physics. 73:3860-3866
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.352897
Popis:	In‐plane transport in an InAs/GaAs semiconductor hetero‐n‐i‐p‐i has been investigated using picosecond transient grating techniques and an order‐of‐magnitude enhancement of the ambipolar transport relative to that measured in a similar undoped sample has been demonstrated. Both the magnitude and the density dependence of this enhanced transport are consistent with an additional driving force that is associated with an in‐plane modulation of the screened n‐i‐p‐i field. This modulation is the result of the spatial separation by perpendicular transport of electrons and holes that also have an in‐plane density modulation.
Databáze:	OpenAIRE
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