Characteristics of double-cascade photodiodes based on p-i-n AlGaAs/GaAs diodes connected by n++-GaAs/i-GaAs/i-AlGaAs/p++-AlGaAs tunnel diodes

Autor:	V. S. Kalinovskii, N V Vaulin, B. Ya. Ber, E. V. Kontrosh, G. V. Klimko
Rok vydání:	2021
Předmět:	History Materials science business.industry Atmospheric temperature range Photoelectric effect Laser Epitaxy Computer Science Applications Education Photodiode law.invention law Optoelectronics business Excitation Power density Diode
Zdroj:	Journal of Physics: Conference Series. 1851:012021
ISSN:	1742-6596 1742-6588
DOI:	10.1088/1742-6596/1851/1/012021
Popis:	Characteristics of double-cascade nonmonolithic p-i-n AlGaAs/GaAs photovoltaic converters of high-power laser radiation, electrically combined with n++-GaAs/i-GaAs/i-AlGaAs/p++-AlGaAs tunnel diodes, have been studied. The AlGaAs/GaAs p-i-n structures of the photovoltaic converters and n++-GaAs/i-GaAs/i-AlGaAs/p++-AlGaAs tunnel diodes were grown by molecular-beam epitaxy. The photoelectric characteristics of the double-cascade AlGaAs/GaAs photovoltaic converters were examined in the temperature range from 103 to 298 K under excitation with a laser light wavelength of 809 nm and a power density ⩽92 W/cm2. The double-cascade p-i-n AlGaAs/GaAs nonmonolithic photovoltaic converters of planar design had a fill factor of 0.88 and efficiency of 58.2% at a temperature of 103 K. It was shown experimentally that the current-voltage characteristics of the connecting n++-GaAs/i-GaAs/i-AlGaAs/p++-AlGaAs tunnel diodes affect the photoelectric parameters of the double-cascade photovoltaic converters of high-power laser light.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::10f81d1f4f6995e27be0ed91fa08c4df https://doi.org/10.1088/1742-6596/1851/1/012021 Zobrazit plný text záznamu