Nearly room-temperature type-II quantum-well lasers at 3–4 μm
| Autor: | Lew Goldberg, James R. Lindle, Chih-Hsiang Lin, P.C. Chang, Christopher L. Felix, J. I. Malin, D. Zhang, S. J. Murry, Rui Q. Yang, Craig A. Hoffman, Shin-Shem Pei, Jerry R. Meyer, E. J. Bartoli |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Solid-state physics business.industry Infrared Mid infrared Heterojunction Condensed Matter Physics Laser Electronic Optical and Magnetic Materials Semiconductor laser theory law.invention law Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Lasing threshold Quantum well |
| Zdroj: | Journal of Electronic Materials. 26:440-443 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | We report optically pumped four-constituent InAs/InGaSb/InAs/AlSb type-II quantum-well lasers emitting at 3.2–4.1 μm. Lasing was observed up to 350K under pulsed operation, with a characteristic temperature T0 up to 68K at temperatures above ambient. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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