Influence of thermal oxidation on the interfacial properties of ultrathin strained silicon layers
| Autor: | M. Seacrist, B. Kellerman, Stavroula N. Georga, Christoforos A. Krontiras, Ph. Komninou, Th. Speliotis, Nikolaos Kelaidis, Panagiotis Dimitrakis, Christos Tsamis, Dimitrios Skarlatos, V. Ioannou-Sougleridis |
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| Rok vydání: | 2011 |
| Předmět: |
Thermal oxidation
Materials science Silicon Metals and Alloys Oxide chemistry.chemical_element Germanium Strained silicon Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials Silicon-germanium chemistry.chemical_compound chemistry Thermal Materials Chemistry Composite material Layer (electronics) |
| Zdroj: | Thin Solid Films. 519:5456-5463 |
| ISSN: | 0040-6090 |
| Popis: | In this work we examine the influence of thermal oxidation on the electrical characteristics of ultra-thin strained silicon layers grown on relaxed Si 0.78 Ge 0.22 substrates under moderate to high thermal budget conditions in N 2 O ambient at 800 °C. The results reveal the presence of a large density of interfacial traps which depends on the oxidation process. As long as the strained silicon layer remains between the growing oxide and the underlying Si 0.78 Ge 0.22 layer, the density of interface traps increases with increasing oxidation time. When the oxidation process consumes the s-Si layer the interface state density undergoes a significant reduction of the order of 40%. This experimental evidence signifies that the strained silicon–Si 0.78 Ge 0.22 interface is a major source of the measured interfacial defects. This situation can be detected only when the front SiO 2 -strained silicon interface and the rear strained silicon–Si 0.78 Ge 0.22 interface are in close proximity, i.e. within a distance of 5 nm or less. Finally, the influence of the material quality deterioration—as a result of the thermal treatment—to the interfacial properties of the structure is discussed. |
| Databáze: | OpenAIRE |
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