Peculiarities of Radiation Defect Formation and Annealing in n-Si Due to Their Interaction with Each Other and Defect Clusters

Autor: P. F. Lvgakov, V. V. Lukyanitsa
Rok vydání: 1984
Předmět:
Zdroj: Physica Status Solidi (a). 84:457-464
ISSN: 1521-396X
0031-8965
Popis: Rearrangement processes proceeding during annealing (Ta = 50 to 500 °C) of radiation defects in 60Co γ-ray-irradiated (Tirr ≦ 50 °C) n-Si crystals (ϱ = 100 to 600 Ωcm) grow-n by the vacuum float-zone technique are studied. The temperature dependences of the Hall coefficient are measured. The results obtained are interpreted taking into account the interaction during annealing of vacancy-type defects (E-centres, divacancies) with each other and interstitial radiation defects (C1-C8 complexes, interstitial carbon C1). Phosphorus-two vacancies complexes, stable to Ta ≧ 500 °C, are shown to be formed as a result of rearrangements and interaction of E-centres between themselves. The character of interaction of vacancy defects with interstitial ones is found to change significantly in the presence of defect clusters in the bulk of the crystal which are formed under heat treatmrnt (T = 800 °C, two hours) of the samples preliminarily irradiated with fast neutrons (flux ΦPHn = 1 × 1014 to 1 × 1016 cm−2). The peculiarities of radiation defects annealing observed in this case are explained taking into account the influence of defect clusters on the migration processes of mobile defects. Nature of radiation defects being formed at various stages of annealing is discussed. [Russian Text Ignored].
Databáze: OpenAIRE
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