Germanium Quantum Well QCSE Waveguide Modulator With Tapered Coupling in Distributed Modulator–Detector System
| Autor: | Yusi Chen, Muyu Xue, Theodore I. Kamins, Yijie Huo, Matthew Morea, Kai Zang, Ching-Ying Lu, Edward T. Fei, Stephanie A. Claussen, James S. Harris, Xiaochi Chen, Raj Dutt |
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| Rok vydání: | 2017 |
| Předmět: |
Coupling
Materials science business.industry Photonic integrated circuit Detector Physics::Optics 02 engineering and technology 01 natural sciences Waveguide (optics) Atomic and Molecular Physics and Optics Silicon-germanium 010309 optics chemistry.chemical_compound 020210 optoelectronics & photonics Optics chemistry Modulation 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Photonics business Quantum well |
| Zdroj: | Journal of Lightwave Technology. 35:4629-4633 |
| ISSN: | 1558-2213 0733-8724 |
| DOI: | 10.1109/jlt.2017.2753582 |
| Popis: | Optical interconnections (interconnects) have been proposed as solutions to the ever-increasing bandwidth requirements and energy consumption in communication systems. Among possible photonic modulation strategies, the Ge quantum well (QW) based quantum-confined Stark effect (QCSE) stands out, as its strong electro-absorption effect allows for potentially lower power consumption and smaller device sizes compared to other modulation mechanisms. Here, we experimentally demonstrate a thin buffer layer Ge QW QCSE waveguide modulator that evanescently couples to and from an Si waveguide through an adiabatic three-dimensional (3D) taper. Simulations confirm that this 3-D taper yields higher coupling efficiency and improved maintenance of the fundamental mode after coupling compared to a 2-D taper. We also demonstrate that this geometry could potentially work in an integrated modulator-detector system. The combination of thin SiGe epitaxy (i.e., the buffer and device layers) with Si waveguides paves the way to easier integration of Si photonic integrated circuits. |
| Databáze: | OpenAIRE |
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