| Popis: |
Thin films of tantalum silicide were sputter deposited from a cold‐pressed, vacuum‐sintered target in a Varian 3180 system onto Si(100) wafers. Currently, the deposition of tantalum silicide from cold‐pressed, vacuum‐sintered targets is performed at relatively low powers of about 1 kW. Although the use of higher deposition power is of great practical interest to obtain increased deposition rates and wafer throughput, the effect on film properties must be determined. In this paper, films deposited at powers as high as ∼3 kW were characterized. The films were annealed in a Varian IA‐200 rapid isothermal annealer. In many cases, analytical measurements such as stoichiometry, stress, microstructure, and morphology were performed before and after annealing. Small variations of film properties were observed when the deposition was done on a heated substrate or on a substrate with negative dc bias voltage applied. It will be shown here that low‐resistivity (60–70 μΩ cm) film of tantalum silicide can be deposited from a cold‐pressed, vacuum‐sintered target at much higher than usual deposition power without affecting the film characteristics significantly. |
