Doping of silicon by pulsed electron beam annealing of deposited layers
| Autor: | M. von Allmen, J. Minnucci, S. S. Lau, M.-A. Nicolet, I. Golecki, M. Mäenpää |
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| Rok vydání: | 1980 |
| Předmět: |
Materials science
Silicon Doping Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Substrate (electronics) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Antimony chemistry Materials Chemistry Wafer Surface layer Penetration depth Layer (electronics) |
| Zdroj: | Thin Solid Films. 67:293-297 |
| ISSN: | 0040-6090 |
| Popis: | Pulsed electron beam annealing was applied to p-type silicon wafers coated with vacuum-deposited antimony layers to obtain p-n junctions. Antimony atoms were found to migrate into the substrate to a distance fo 2000–3000 A. The antimony-doped layer shows two different regions. The top surface layer is highly conductive and has a textured structure. The deeper region contains highly substitutional antimony with a concentration exceeding the solid solubility limit. However, only 4% of the antimony is electrically active. The penetration depth of the antimony atoms and the formation of the supersaturated solution indicate that melting is induced by the irradiation. Electrically the samples exhibit diode characteristics. |
| Databáze: | OpenAIRE |
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