A Comprehensive Benchmarking Method for the Net Combination of Mobility Enhancement and Density-of-States Bottleneck
| Autor: | In-Geun Lee, Wan-Soo Park, Jae-Hak Lee, Tae-Woo Kim, Seung-Won Yun, Hyeon-Seok Jeong, Hideaki Matsuzaki, Hyun-Jeong Jung, Dae-Hyun Kim, Hiroki Sugiyama, Takuya Tsutsumi, Hyeon-Bhin Jo |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Physics chemistry.chemical_element 01 natural sciences Electronic Optical and Magnetic Materials chemistry Product (mathematics) 0103 physical sciences Saturation (graph theory) Density of states Peak value Electrical and Electronic Engineering Atomic physics Gate capacitance Indium |
| Zdroj: | IEEE Electron Device Letters. 42:804-807 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2021.3072942 |
| Popis: | In this letter, we propose a comprehensive benchmarking method to simultaneously address mobility enhancement and density-of-states bottleneck in advanced field-effect-transistors (FETs) with novel high-mobility (high- $\mu$ ) channel materials, where we focused on conventional covalent bonding semiconductors with pure and partially ionic character. This method relies only on the measured extrinsic transconductance of a long-channel FET in the saturation regime together with the source resistance, yielding the product of the effective mobility ( $\mu _{{eff}}$ ) and effective gate capacitance ( ${C}_{g\_{}{{eff}}}$ ). We tested this method in In x Ga1– x As quantum-well high-electron-mobility transistors (HEMTs) with various indium mole fractions, such as 0.53, 0.7, 0.8 and 1, as well as in Si n-FETs. We found that the In x Ga1– x As HEMTs with $\mu _{{eff}}$ over 10,000 cm2/ $\text{V}\cdot \text{s}$ at 300 K provided more than 20 times greater $\mu _{{eff}} \times {C}_{g\_{}{{eff}}}$ than Si n-FETs. More specifically, the product initially improved as ${x}$ increased, then showed a peak value of $10,300\,\,\mu \text{F}\cdot \text{V}^{-1}\cdot \text{s}^{-1}$ at ${x}$ of around 0.8, and degraded slightly beyond that composition. To verify the validness of the proposed method, we separately measured and analyzed ${C}_{g\_{}{{eff}}}$ and $\mu _{{eff}}$ using the split-CV technique, showing excellent agreement with the ones from the proposed method. |
| Databáze: | OpenAIRE |
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