Optimization of Poly-Silicon Deposition Process for Semiconductor Bridge

Autor:	Guo Xiang Hu, Zheng Yuan Zhang, Zhi Cheng Feng, Jian Gen Li, Yong Mei, Xiao Gang Li
Rok vydání:	2011
Předmět:	Materials science Silicon business.industry General Engineering chemistry.chemical_element Bridge (interpersonal) Process conditions Semiconductor chemistry Electronic engineering Optoelectronics Deposition (phase transition) business Deposition process
Zdroj:	Advanced Materials Research. 339:92-95
ISSN:	1662-8985
DOI:	10.4028/www.scientific.net/amr.339.92
Popis:	Aiming at the severe effect of poly-silicon deposition process on the performance of semiconductor bridge, experiments were made on optimization of poly-silicon deposition to obtain optimal process conditions. Resistance of the poly-silicon semiconductor bridge was stabilized 1±0.07Ω, satisfying its application requirements.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::10cb12f8cdfc8029aa5f5a620b73060a https://doi.org/10.4028/www.scientific.net/amr.339.92 Zobrazit plný text záznamu