Thresholds for the phase formation of cubic boron nitride thin films

Autor:	H. Feldermann, M. Sebastian, Carsten Ronning, Hans Hofsäss
Rok vydání:	1997
Předmět:	chemistry.chemical_compound Materials science chemistry Boron nitride Phase (matter) Analytical chemistry Nucleation Substrate (electronics) Nitride Thin film Phase diagram Ion
Zdroj:	Physical Review B. 55:13230-13233
ISSN:	1095-3795 0163-1829
DOI:	10.1103/physrevb.55.13230
Popis:	We introduce a phase diagram for boron nitride film growth. It is based on studies of the influence of the ion energy and substrate temperature on the phase formation using mass-selected ion-beam deposition of ${\mathrm{B}}^{+}$ and ${\mathrm{N}}^{+}$ ions. For the formation of the cubic phase we find threshold values of 125 eV for the ion energy and 150 \ifmmode^\circ\else\textdegree\fi{}C for the substrate temperature. Furthermore, we find a characteristic ion energy and substrate temperature dependence of the compressive stress, yielding low stress values for high energies and/or temperatures. c-BN nucleation and growth is attributed to a subsurface process qualitatively described by the subplantation model.
Databáze:	OpenAIRE
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