High resistivity and low dielectric constant amorphous carbon nitride films: application to low-k materials for ULSI
| Autor: | Masami Aono, Shoji Nitta |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
Mechanical Engineering General Chemistry Dielectric Nitride Sputter deposition Electronic Optical and Magnetic Materials Amorphous solid chemistry.chemical_compound Amorphous carbon chemistry Sputtering Materials Chemistry Electrical and Electronic Engineering Thin film Composite material Carbon nitride |
| Zdroj: | Diamond and Related Materials. 11:1219-1222 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/s0925-9635(01)00718-x |
| Popis: | Amorphous carbon nitride films, a-CNx, have been candidates for interlayer insulator materials on ultra large-scale integration (ULSI). The most important property of insulators for ULSI application is low dielectric constant, i.e. low-k. It is reported in this paper the success in preparing carbon nitride films with dielectric constant less than 2. The sample films are prepared by a layer-by-layer method. The preparation consists of two cyclic processes. First process is a preparation of a-CNx thin layer by a nitrogen radical sputtering. Second process is a treatment of a-CNx layer by atomic hydrogen. To understand the characteristic low-k by atomic hydrogen treatment and by a layer-by-layer process, we have studied the effect of hydrogen radicals to a-CNx to get lower dielectric constant materials. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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