Photoluminescence on cerium-doped ZnO nanorods produced under sequential atomic layer deposition–hydrothermal processes
| Autor: | J. Espino, Pascual Bartolo-Pérez, J. L. Cervantes-López, O. Contreras, R. García-Gutiérrez, Juan Jose Alvarado-Gil, R. Rangel, E. Martínez |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence Dopant Doping Analytical chemistry chemistry.chemical_element Nanotechnology 02 engineering and technology General Chemistry Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences Hydrothermal circulation Atomic layer deposition Cerium chemistry 0103 physical sciences General Materials Science Nanorod 0210 nano-technology |
| Zdroj: | Applied Physics A. 123 |
| ISSN: | 1432-0630 0947-8396 |
| DOI: | 10.1007/s00339-016-0722-3 |
| Popis: | Doped and undoped ZnO nanorod arrays were produced combining atomic layer deposition and hydrothermal processes. First, a ZnO layer with preferential orientation normal to the c-axis was grown on the substrate by means of the decomposition of diethylzinc; subsequently, the nanorod arrays were produced through solvothermal process using a solution of Zn(NO3)2 as precursor. Doped ZnO nanorods were produced using Ce(C2H3O2)3·H2O as dopant agent precursor. Undoped and Ce-doped ZnO nanorod arrays showed high-intensity photoluminescence. The doping concentration of x = 0.04 (Zn1−x Ce x O) displayed the highest photoluminescence. Undoped ZnO showed an intense UV peak centered at 382 nm with a narrow full wide half maximum of 33 nm. Ce-doped ZnO PL spectra contain three bands, one signal in the UV region centered at 382 nm, other centered at 467 nm in the near-green region and other one emission centered at 560 nm. The results herein exposed demonstrate the capability to produce high-quality ZnO and Zn1−x Ce x O films. |
| Databáze: | OpenAIRE |
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