Application of rapid thermal processing on SiNx thin film to solar cells
| Autor: | Peiqing Luo, Jingxiao Wang, Zhibin Zhou, Jianhua Huang, R.Q. Cui, Youjie Li |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Silicon business.industry Energy Engineering and Power Technology chemistry.chemical_element Quantum dot solar cell law.invention Monocrystalline silicon Solar cell efficiency chemistry law Rapid thermal processing Solar cell Electronic engineering Optoelectronics Wafer Plasmonic solar cell business |
| Zdroj: | Frontiers of Energy and Power Engineering in China. 2:519-523 |
| ISSN: | 1673-7504 1673-7393 |
| DOI: | 10.1007/s11708-008-0095-1 |
| Popis: | Rapid thermal processing (RTP) of SiNx thin films from PECVD with low temperature was investigated. A special processing condition of this technique which could greatly increase the minority lifetime was found in the experiments. The processing mechanism and the application of the technique to silicon solar cells fabrication were discussed. A main achievement is an increase of the minority lifetime in silicon wafer with SiNx thin film by about 200% after the RTP was reached. PC-1Dsimulation results exhibit an enhancement of the efficiency of the solar cell by 0.42% coming from the minority lifetime improvement. The same experiment was also conducted with P-diffusion silicon wafers, but the increment of minority lifetime is just about 55%. It could be expected to improve the solar cell efficiency if it would be used in silicon solar cells fabrication with the combination of laser firing contact technique. |
| Databáze: | OpenAIRE |
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