Stacked GaAs multi-quantum wires grown on vicinal GaAs(110) surfaces by molecular beam epitaxy
| Autor: | T. Takeuchi, Shigehiko Hasegawa, Hisao Nakashima, Yoshiji Inoue, Koichi Inoue, Takehiko Kato |
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| Rok vydání: | 1998 |
| Předmět: |
Coupling
Materials science Photoluminescence Physics and Astronomy (miscellaneous) business.industry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound chemistry Modulation Transmission electron microscopy Physics::Accelerator Physics Optoelectronics business Quantum Vicinal Molecular beam epitaxy |
| Zdroj: | Applied Physics Letters. 72:465-467 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.120787 |
| Popis: | Stacked GaAs quantum wires (QWRs) are grown on the surfaces with giant steps which are naturally formed on vicinal GaAs(110) substrates by molecular beam epitaxy. Transmission electron microscopy observation clearly shows stacked structures of coherently aligned quantum wires which are induced by GaAs layer thickness modulation at the step edges. Photoluminescence peak shifts with the thickness of the AlGaAs barrier layers are explained as due to the coupling between the QWRs. |
| Databáze: | OpenAIRE |
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