Single-event upset in commercial silicon-on-insulator PowerPC microprocessors
| Autor: | Farokh Irom, Allan H. Johnston, F.F. Farmanesh, G.M. Swift, D.G. Millward |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Nuclear and High Energy Physics
Engineering business.industry PowerPC Electrical engineering Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY Upset Nuclear Energy and Engineering Single event upset Hardware_INTEGRATEDCIRCUITS Electrical and Electronic Engineering business Order of magnitude Voltage |
| Zdroj: | IEEE Transactions on Nuclear Science. 49:3148-3155 |
| ISSN: | 1558-1578 0018-9499 |
| Popis: | Single-event upset effects from heavy ions and protons are measured for Motorola and IBM silicon-on-insulator (SOI) microprocessors, and compared with results for similar devices with bulk substrates. The cross sections of the SOI processors are lower than their bulk counterparts, but the threshold is about the same, even though the charge collections depth is more than an order of magnitude smaller in the SOI devices. The upset rates are low enough to allow these devices to be used in space applications where occasional register or functional operating errors can be tolerated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|