Dynamic Bias Instability of p-Channel Polycrystalline-Silicon Thin-Film Transistors Induced by Impact Ionization
| Autor: | Hung-Chang Sun, Yuan-Jun Hsu, Ching-Chieh Shih, Yen-Ting Chen, Jim-Shone Chen, Ying-Jhe Yang, Chee-Wee Liu, Chun-Yuan Ku, Ching-Fang Huang |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Condensed matter physics business.industry Analytical chemistry Electron engineering.material Secondary electrons Electronic Optical and Magnetic Materials Impact ionization Semiconductor Polycrystalline silicon Thin-film transistor Electric field Field desorption engineering Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 30:368-370 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2009.2013644 |
| Popis: | The dynamic stress switching of p-channel polycrystalline-silicon (poly-Si) thin-film transistors from full depletion to accumulation bias creates the high electric field near source/drain (S/D) junctions due to the slow formation of the accumulated electrons at the SiO2/poly -Si interface. The high electric field causes impact ionization near the S/D, where the secondary electrons surmount the SiO2 barrier and are trapped near the interface. The channel region near the S/D is inverted to p-type by the trapped electrons, and the effective channel length is reduced. The drain current increases with the stress time, particularly for short-channel devices. |
| Databáze: | OpenAIRE |
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