Resonant cavity LED with InAs/GaAs active region

Autor:	M. Biaho, Volker Gottschalch, J. Kvietkova, Bernd Rheinländer, J. Skrinjarova, Jozef Kováč, S. Hardt, Jan Jakabovic
Rok vydání:	2002
Předmět:	Materials science business.industry Exciton Physics::Optics Resonance law.invention Gallium arsenide Condensed Matter::Materials Science Laser linewidth Resonator chemistry.chemical_compound chemistry law Monolayer Optoelectronics Quantum efficiency business Light-emitting diode
Zdroj:	ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386).
Popis:	We present a resonant cavity LED with an InAs monolayer active region embedded in an AlAs/AlGaAs vertical resonant cavity. In comparison to the structures without a resonator but with the same active region the realized resonant cavity LED exhibited enhanced external quantum efficiency and decreased linewidth. Using the monolayer active region allows a wavelength redshift of the emission spectrum of more than 45 nm while keeping the external quantum efficiency and linewidth at approximately the same value as for the resonant cavity LED with monolayer-free active region.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::107da28c3f70ff848001ef2e7a54d50b https://doi.org/10.1109/asdam.2000.889468 Zobrazit plný text záznamu