Role of contacts in characterization of deep traps in semi-insulating GaAs by thermally stimulated current spectroscopy
| Autor: | Z-Q. Fang, David C. Look, M. Pavlovic, U. V. Desnica |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Photocurrent
Materials science Solid-state physics business.industry Thermally stimulated current spectroscopy Analytical chemistry chemistry.chemical_element Schottky diode Condensed Matter Physics Electronic Optical and Magnetic Materials Characterization (materials science) chemistry Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Ohmic contact Semi insulating Indium |
| Zdroj: | Journal of Electronic Materials. 28:L27-L30 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-999-0255-z |
| Popis: | The role of contacts in characterization of traps in semi-insulating (SI) GaAs by thermally stimulated current (TSC) methods has been demonstrated by comparing alloyed In and soldered In contacts. Alloyed In contacts, which have an ohmic characteristic, assure high sensitivities in both TSC and temperature dependent photocurrent (PC), and both are important for determining the trap concentrations in SI GaAs. On the other hand, soldered In contacts, which act like Schottky barriers, cause a significant reduction of both PC and TSC, particularly at low temperatures, and can lead to a misinterpretation of TSC results. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink