| Autor: |
Kaushik Roy Choudhury, Irina Malajovich, Lynda Kaye Johnson, Qijie Guo, Dennis J. Walls, Yanyan Cao, Jonathan V. Caspar, Wei Wu, Boheng Ma |
| Rok vydání: |
2014 |
| Předmět: |
|
| Zdroj: |
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC). |
| DOI: |
10.1109/pvsc.2014.6925403 |
| Popis: |
The effect of exposing Cu 2 ZnSn(S,Se) 4 films to ambient humidity during various stages of device fabrication was studied. Cu 2 ZnSn(S,Se) 4 films were made via solution-based processing of binary and ternary metal-chalcogenide nanoparticle precursors. Following the formation of precursor films, storage conditions between successive steps for device completion were varied. The performance of finished devices showed little sensitivity to overnight storage conditions with the exception of exposure to high relative humidity prior to the p-n junction formation, which resulted in catastrophic efficiency loss. The time evolution of the moisture degradation was exponential, with a characteristic time of approximately 2 hours. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
