Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistors

Autor:	Hyun Jae Kim, Yuri Choi, Jung Hyeon Bae, Gun Hee Kim, Jae-Min Hong, Woong Hee Jeong, Jae Woong Yu
Rok vydání:	2010
Předmět:	Electron mobility Materials science Physics and Astronomy (miscellaneous) Transistor Wide-bandgap semiconductor Analytical chemistry chemistry.chemical_element Oxygen Threshold voltage law.invention chemistry X-ray photoelectron spectroscopy law Thin-film transistor Scandium
Zdroj:	Applied Physics Letters. 97:162102
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.3503964
Popis:	The carrier-suppressing effect of Sc in InZnO systems was studied using thin-film transistors (TFTs) with a sol-gel processed active channel. As the amount of Sc content increased, the off current decreased, and the threshold voltage shifted to a positive bias region. The Sc effectively controlled the oxygen vacancies and supplied free electrons. X-ray photoelectron spectroscopy (XPS) verified that the vacancy-related oxygen 1s peak decreased with increasing Sc content. The TFT performance with 14% Sc showed that a field-effect mobility and on-off ratio were 2.06 cm2/V s and 8.02×106, respectively.
Databáze:	OpenAIRE
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