A study of borazon-gate pH-sensitive field effect transistors

Autor:	W. Torbicz, A. Olszyna, W. Włosiński, D. Sobczyńska
Rok vydání:	1987
Předmět:	Inorganic Chemistry Secondary ion mass spectrometry Range (particle radiation) Membrane Electron diffraction Chemistry Pulse (signal processing) Materials Chemistry Analytical chemistry Field-effect transistor Plasma Condensed Matter Physics Deposition (law)
Zdroj:	Journal of Crystal Growth. 82:757-760
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(87)80022-2
Popis:	An attempt was made to investigate the effect of deposition of borazon layers on their physico-chemical properties including the chemosensoric ones by the pulse plasma method. The layers were assessed by electron diffraction patterns, and SIMS analysis was used for membrane identification. The borazon-gatc sensors responded linearly to pH in the range 1.8–10; the slope was about 50–59 mV pH−1.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::105e02059b31a35cc1c3f08ae52753c3 https://doi.org/10.1016/s0022-0248(87)80022-2 Zobrazit plný text záznamu