Determination of carrier lifetime in thermally evaporated In2S3 thin films by light induced transient grating technique
| Autor: | K. V. Saritha, V. Grivickas, I.A. Svito, K.T. Ramakrishna Reddy, P. Â Ščajev, Sk. Nayab Rasool, Mikhail S. Tivanov |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Soda-lime glass Materials science Auger effect Annealing (metallurgy) Diffusion Analytical chemistry 02 engineering and technology General Chemistry Substrate (electronics) Carrier lifetime Atmospheric temperature range 021001 nanoscience & nanotechnology 01 natural sciences symbols.namesake 0103 physical sciences symbols General Materials Science Thin film 0210 nano-technology |
| Zdroj: | Applied Physics A. 126 |
| ISSN: | 1432-0630 0947-8396 |
| DOI: | 10.1007/s00339-020-03495-5 |
| Popis: | In2S3 thin films were deposited onto soda lime glass substrates using thermal evaporation technique at a constant substrate temperature of 300 °C and the films were annealed in a sulfur ambient at 250 °C and 300 °C for 1 h. Light induced transient grating (LITG) technique was used to determine the carrier lifetime in In2S3 thin films. The determined carrier lifetime values for different excitation energy densities, I0 = 0.06–1.64 mJ/cm2 decreased from 206 to 18 ps and 150 to 14 ps for the films annealed at 250 °C and 300 °C respectively. Further, the bimolecular, Auger recombination coefficients and diffusion coefficient were determined in the films. The observed bimolecular carrier recombination origin was explained by interface and Auger recombination processes. |
| Databáze: | OpenAIRE |
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