GaN-Based Light-Emitting Diode With Sputtered AlN Nucleation Layer
| Autor: | Chun-Kai Wang, Tsun-Kai Ko, Wei-Chih Lai, Ya-Yu Yang, Shoou-Jinn Chang, Schang-Jing Hon, Cheng-Hsiung Yen |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Materials science
business.industry Nucleation Gallium nitride Sputter deposition Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Reverse leakage current chemistry.chemical_compound chemistry law Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering business Layer (electronics) Light-emitting diode |
| Zdroj: | IEEE Photonics Technology Letters. 24:294-296 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2011.2177654 |
| Popis: | The crystal quality, electrical, and optical characteristics of GaN-based light-emitting diodes (LEDs) were improved using a sputtered AlN nucleation layer. Replacing the in situ AlN nucleation layer with the sputtered AlN nucleation layer reduced the (002) and (102) X-ray rocking curve widths of the GaN layer from 318.0 to 201.1 and 412.5 to 225.0 arcsec, respectively. The -20-V reverse leakage current of the LEDs with the sputtered AlN nucleation layer is about three orders less than that of the LEDs with the in situ AlN nucleation layer. In addition, the LEDs with sputtered AlN nucleation layer could sustain more than 60% passing yield on the ESD test of under a -600-V machine mode, whereas the LEDs with the in situ AlN nucleation layer sustained less than 40% passing yield. Moreover, the 20-mA output power of the LEDs with the sputtered AlN nucleation layer also improved by approximately 5.73% compared with that of the LEDs with the in situ AlN nucleation layer. |
| Databáze: | OpenAIRE |
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