Determination of the effect of a strain relaxation layer on the internal electric field measurement in an InGaN/GaN multiple-quantum-well structure by using electroreflectance spectroscopy

Autor:	Dong-Hyun Jang, Dong-Soo Shin, Jong-In Shim, Su-Ik Park
Rok vydání:	2013
Předmět:	Materials science business.industry Superlattice General Physics and Astronomy chemistry.chemical_element Polarization (waves) Piezoelectricity law.invention chemistry law Electric field Optoelectronics business Spectroscopy Indium Light-emitting diode Diode
Zdroj:	Journal of the Korean Physical Society. 62:1291-1294
ISSN:	1976-8524 0374-4884
DOI:	10.3938/jkps.62.1291
Popis:	We investigate the effect of a strain relaxation layer (SRL) on the internal-field measurement of InGaN/GaN multiple quantum wells (MQWs) in blue light-emitting diodes by using electroreflectance (ER) spectroscopy. The polarization charges of the SRL are relatively smaller than those of the MQWs because the SRL has a lower indium composition in the InGaN/GaN superlattice. Therefore, the phases of the ER signals from the MQWs and the SRL are reversed at different bias voltages. From two different compensation voltages, the piezoelectric fields in MQWs and the SRL are estimated separately. When the SRL is not considered, the piezoelectric field in the MQWs can be underestimated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::104d6341b21cf082c7128a4bae816e72 https://doi.org/10.3938/jkps.62.1291 Zobrazit plný text záznamu Full text from SpringerLink