Kinetics of dislocation-mediated strain relaxation in InGaAs/GaAs heteroepitaxy

Autor:	Candace Lynch, Roderic Beresford, Eric Chason
Rok vydání:	2003
Předmět:	Materials science Condensed matter physics Effective stress Mineralogy Heterojunction Condensed Matter Physics Inorganic Chemistry Materials Chemistry Stress relaxation Surface roughness Relaxation (physics) Thin film Dislocation Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 251:106-111
ISSN:	0022-0248
Popis:	The relaxation of InGaAs/GaAs thin films grown by molecular beam epitaxy is studied by an in situ optical stress sensor technique. Profiles of normalized film strain versus thickness are obtained for several growth temperatures and two InGaAs compositions. The profiles are modeled using Dodson and Tsao's concept of effective stress, and a new kinetic model of dislocation sources associated with the surface roughness, which could be generated by film growth and have a transient response following a growth interrupt.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::104cb7046e511c6ed70152b92156b657 https://doi.org/10.1016/s0022-0248(02)02376-x Zobrazit plný text záznamu Full Text from ScienceDirect