Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: Current and voltage dependence
| Autor: | A. N. Turkin, S. S. Mamakin, V. E. Kudryashov, A.N. Kovalev, A. E. Yunovich, F. I. Manyakhin |
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| Rok vydání: | 2001 |
| Předmět: | |
| Zdroj: | Semiconductors. 35:827-834 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/1.1385720 |
| Popis: | Luminescence spectra and quantum yield in light emitting diodes (LEDs) based on InGaN/AlGaN/GaN heterostructures with multiple quantum wells (MQWs) were studied in the range of currents J=10−6–10−1 A. Minor spread in the quantum yield at operating currents (±15% at J≈10 mA) was observed in these LEDs, which were fabricated by Hewlett-Packard. The spread is due to differences in the current and voltage dependences of the diode emission intensity, caused by differences in the charged center distribution across the space-charge region (SCR) of the structures and in the role of the tunnel current component at low voltages. In the diodes with a thin (≲120 nm) SCR, a tunnel emission band was observed for J≲100 µA; the peak energy of this band ℏωmax=1.92–2.05 eV corresponds to the voltage applied. At low currents (J=0.05–0.5 mA), the spectral position of the main peak ℏωmax=2.35–2.36 eV is independent of the voltage and is determined by the radiative transitions between the localized states. At J>1 mA, this band shifts with the current (ℏωmax=2.36–2.52 eV). Its shape corresponds to the model for the occupation of states in the two-dimensional energy band tails, which are caused by the microscopic potential fluctuations. The four parameters in this model are related to the calculated energy band diagram of the MQW structure. |
| Databáze: | OpenAIRE |
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