| Popis: |
As design rules continue to shrink beyond the lithography wavelength, pattern printability becomes a significant challenge in fabrication for 45nm and beyond. Model-based OPC and DRC checkers have been deployed using metrology data such as CD to fine-tune the model, and to predict and identify potential structures that may fail in a manufacturing environment. For advanced technology nodes with tighter process windows, it is increasingly important to validate the models with empirical data from both product and FEM wafers instead of relying solely on traditional metrology and simulations. Furthermore, feeding the information back to designers can significantly reduce the development efforts. |
