Generation and Propagation of Single Event Transients in 0.18-$\mu{\rm m}$ Fully Depleted SOI
Autor: | J. Brandt, Peter W. Wyatt, Matthew J. Gadlage, A.M. Soares, B. Narasimham, Craig L. Keast, P. M. Gouker, J.M. Knecht, Brian Tyrrell, Bharat L. Bhuva, Dale McMorrow |
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Rok vydání: | 2008 |
Předmět: |
Nuclear and High Energy Physics
Materials science business.industry Electrical engineering Silicon on insulator Pulse (physics) Nuclear Energy and Engineering Body contact Logic gate Optoelectronics Heavy ion Transient (oscillation) Electrical and Electronic Engineering business Cmos process Event (particle physics) |
Zdroj: | IEEE Transactions on Nuclear Science. 55:2854-2860 |
ISSN: | 0018-9499 |
Popis: | Single event transients were characterized experimentally in fast logic circuits fabricated in 0.18-mum FDSOI CMOS process using laser-probing techniques. We show that the transient pulse widens as it propagates; the widening is largely eliminated by the body contact. Good agreement is observed between pulsed-laser and heavy ion testing. |
Databáze: | OpenAIRE |
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