Performance of gas source MBE grown InAlGaAs photovoltaic detectors tailored to 1.4μm

Autor:	Y Gu, Aowen Li, Hsby Li, Y.G. Zhang, Xiaqin Fang, Luchun Zhou, Y.Y. Cao, Wang Kechao
Rok vydání:	2013
Předmět:	Materials science business.industry Photodetector Photovoltaic detectors Substrate (electronics) Condensed Matter Physics Photodiode law.invention Inorganic Chemistry Wavelength Full width at half maximum Optics law Materials Chemistry Optoelectronics business Absorption layer Dark current
Zdroj:	Journal of Crystal Growth. 378:579-582
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2012.12.159
Popis:	InAlGaAs photodiodes with 50% cut-off wavelength of 1.41 μm at room temperature have been grown by using gas source MBE with convenient and reliable procedure, and the performances have been characterized in detail. The InAlGaAs absorption layer shows a mismatch of −8×10 −5 to the InP substrate with a full width at half maximum of around 20 arcs. Dark current of 247 pA at reverse bias of 10 mV and zero bias resistance of 41 M Ω has been measured for the devices at room temperature with 200 μm mesa diameter. The dark current of this InAlGaAs photodetector is about 20 times lower than the In 0.53 Ga 0.47 As photodetector with similar structure processed at the same time.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::10373a3446764bff4ed2ec2a961a5ef5 https://doi.org/10.1016/j.jcrysgro.2012.12.159 Zobrazit plný text záznamu Full Text from ScienceDirect