Stress-induced width-dependent degradation of low-temperature polycrystalline silicon thin-film transistor
| Autor: | Chrong Jung Lin, Hsing-Yi Liang, Szu-I Hsieh, Ya-Chin King, Hung-Tse Chen |
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| Rok vydání: | 2007 |
| Předmět: |
Electron mobility
Materials science Physics and Astronomy (miscellaneous) Silicon business.industry Subthreshold conduction Transistor Low-temperature polycrystalline silicon chemistry.chemical_element Substrate (electronics) engineering.material law.invention Polycrystalline silicon chemistry Thin-film transistor law engineering Optoelectronics business |
| Zdroj: | Applied Physics Letters. 90:183502 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.2734504 |
| Popis: | This study characterizes the stress-induced subthreshold degradation effect in low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) formed using sequential lateral solidified (SLS) crystallization on a glass substrate. The SLS process is adopted to improve carrier mobility by increasing the grain size. The deterioration of the innate subgrain boundaries that are induced by channel hot-electron stress causes these transistors to exhibit double-hump subthreshold characteristics which become more prominent as the width of the channel increases. A physical theory and a proposed transistor network model accurately explain and predict the width-dependent subthreshold degradation characteristics of these stress LTPS-TFTs. |
| Databáze: | OpenAIRE |
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