Photoluminescence detection of impurities introduced in silicon by dry etching processes
| Autor: | W. D. Sawyer, R. J. Davis, M. Singh, H.‐U. Habermeier, Jörg Weber |
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| Rok vydání: | 1986 |
| Předmět: |
Photoluminescence
Argon Physics and Astronomy (miscellaneous) Silicon technology industry and agriculture General Engineering Analytical chemistry chemistry.chemical_element General Chemistry chemistry General Materials Science Crystalline silicon Dry etching Reactive-ion etching Luminescence Carbon |
| Zdroj: | Applied Physics A Solids and Surfaces. 41:175-178 |
| ISSN: | 1432-0630 0721-7250 |
| DOI: | 10.1007/bf00616836 |
| Popis: | We report on a photoluminescence study of silicon samples subjected to different dry etching processes. Several luminescence lines, known from defects produced by high-energy irradiation, manifest damage of the crystalline material. Noble gas ion beam etching (using Ne+, Ar+, Kr+, and Xe+) with ion energies as low as 400 eV produces characteristic luminescence lines which correspond to defects within a 200–300 A thick surface layer. Incorporation of carbon during CF4 reactive ion etching produces the familiar G-line defect. The G-line photoluminescence intensity in our samples is directly correlated with the substitutional carbon concentration, as determined by infrared absorption measurements before the etch process; we therefore suggest that a simple method to determine the substitutional carbon concentration in a crystalline silicon sample is a standard dry etching process and a comparison of the resulting G-line photoluminescence intensity to a calibrated sample. The sensitivity of this method seems to be better than 1014 carbon atoms/cm3. |
| Databáze: | OpenAIRE |
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