Low pressure and low temperature gallium arsenide homoepitaxy employing in-situ generated arsine
| Autor: | L. R. Thompson, G. J. Collins, R. G. Philstrom, T. Y. Sheng |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Hydrogen
Chemistry Inorganic chemistry chemistry.chemical_element Activation energy Condensed Matter Physics Decomposition Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound Arsine Materials Chemistry Electrical and Electronic Engineering Trimethylgallium Carbon Arsenic |
| Zdroj: | Journal of Electronic Materials. 21:277-279 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02660454 |
| Popis: | Removed from the deposition region, an upstream hydrogen microwave plasma etches a surface of solid arsenic located downstream to generate arsenic hydrides. The latter are used with trimethylgallium (TMGa) to achieve low temperature (400–490° C) and low pressure (750 mTorr) homoepitaxial GaAs films. No active or afterglow plasma exists in the growth region. The homoepitaxial growth activation energy of 62 kcal/mole is consistent with the heterogeneous decomposition of TMGa in the absence of arsine. Precursor V-III ratios as low as 0.25 are used to achieve homoepitaxial films, but with high levels of carbon impurities (1019 to mid 1020 cm−3). Carbon incorporation increases at low V-III ratios (0.25 to 0.5) for increasing temperatures with an activation energy of 23 kcal/mole. As the V-III ratios are increased above 1.0, the carbon incorporation activation energy decreases slightly to 15 kcal/mole. |
| Databáze: | OpenAIRE |
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