Industrial relevance of deep junctions produced by rapid thermal processing for power integrated circuits

Autor:	Christian Ganibal, J.-M. Dilhac, L. Cornibert, S. Roux, Benjamin Morillon
Rok vydání:	2003
Předmět:	chemistry.chemical_compound Zone melting Thermal conductivity Temperature control chemistry Computer science Rapid thermal processing Electronic engineering Silicon carbide Power semiconductor device Heat sink Voltage
Zdroj:	11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).
DOI:	10.1109/ispsd.1999.764107
Popis:	An alternative method for creating total vertical junction insulation for power devices is presented. It involves the thermomigration of molten Al/Si. First, the method is theoretically detailed. A full description of the equipment required for this task is then given with special emphasis on the specific characteristics needed. Physical and electrical results are briefly discussed, showing the efficiency of the method in terms of surface consumption and voltage handling capability. Finally, application of thermomigration to a manufacturing environment is considered.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::102f404a89e48c39643599f4ae56bc96 https://doi.org/10.1109/ispsd.1999.764107 Zobrazit plný text záznamu