Wetting of 4He on rough cesium substrates
| Autor: | Etienne Rolley, M. Poujade, Alexis Prevost, C. Guthmann |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Length scale
Mesoscopic physics Materials science business.industry Substrate (electronics) Surface finish Condensed Matter Physics Electronic Optical and Magnetic Materials Contact angle Optics Wetting transition Chemical physics Surface roughness Wetting Electrical and Electronic Engineering business |
| Zdroj: | Physica B: Condensed Matter. 280:80-84 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/s0921-4526(99)01459-3 |
| Popis: | We discuss the behaviour of 4He meniscus on various disordered Cs substrates. We have first studied the dynamics of the contact line on Cs substrates evaporated at low temperature. The activated motion of the line is consistent with a substrate disorder of mesoscopic length scale. We have performed further studies of the contact line behaviour on substrates with roughness of macroscopic length scale. Close to the wetting transition, we find that a film invades the substrate leading to marked changes in the value of the contact angle. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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