Growth of Si/Si1_xGex/Si (x < 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy
| Autor: | M. A. Akmaev, O. V. Uvarov, I. P. Kazakov, A. V. Klekovkin, V. A. Tsvetkov |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Scanning electron microscope business.industry Alloy technology industry and agriculture Heterojunction engineering.material Epitaxy 01 natural sciences Electronic Optical and Magnetic Materials 010309 optics Condensed Matter::Materials Science Free molecular flow 0103 physical sciences engineering Optoelectronics business Quantum well Molecular beam epitaxy Electron gun |
| Zdroj: | Bulletin of the Lebedev Physics Institute. 46:5-8 |
| ISSN: | 1934-838X 1068-3356 |
| DOI: | 10.3103/s1068335619010020 |
| Popis: | Single quantum wells in the system Si1_xGex/Si with x < 0.1 are grown by molecular-beam epitaxy in the mode of periodic Ge molecular flow interruption during the formation of the alloy layer. It allowed an increase in the operating current of the source electron gun, which provided a more stable molecular Ge flow. The grown heterostructures are studied by transmission scanning electron microscopy methods |
| Databáze: | OpenAIRE |
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