Tuneable confinement energies in a quasi-one-dimensional electron gas regrown on a patterned GaAs backgate
| Autor: | M. P. Grimshaw, H. P. Hughes, G. A. C. Jones, Michael Pepper, David A. Ritchie, R. E. Tyson, Jeremy Burroughes, Donald Dominic Arnone |
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| Rok vydání: | 1995 |
| Předmět: |
Electron mobility
Condensed matter physics business.industry Chemistry Cyclotron resonance Heterojunction General Chemistry High-electron-mobility transistor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Materials Chemistry Optoelectronics Thin film Fermi gas business Plasmon Molecular beam epitaxy |
| Zdroj: | Solid State Communications. 96:85-88 |
| ISSN: | 0038-1098 |
| Popis: | A quasi-one dimensional (Q1D) electron gas has been fabricated from a high electron mobility transistor regrown by molecular beam epitaxy onto facets of a patterned backgate consisting of alternate layers of p- and n-GaAs. By applying biases independently to the p- and n-GaAs layers, both the carrier density and the confinement width were varied. The effects of changes in these quantities were detected by measuring far-infrared cyclotron resonance spectra of the structure, which were used to determine the Q1D confinement energy. Tuneability of the confinement energy has been demonstrated for different p n - GaAs bias combinations, and the effects of the backgate on the Q1D gas may be explained by use of the local plasmon model. |
| Databáze: | OpenAIRE |
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