| Autor: |
Louis G. Casagrande, Mary L. Rosenbluth, Bruce J. Tufts, Nathan S. Lewis |
| Rok vydání: |
1986 |
| Předmět: |
|
| Zdroj: |
Homogeneous and Heterogeneous Photocatalysis ISBN: 9789027722218 |
| DOI: |
10.1007/978-94-009-4642-2_21 |
| Popis: |
Kinetic methods for identification of the dominant recombination mechanism of photogenerated carriers can yield important information concerning the current-voltage behavior of semiconductor/ liquid junctions. We describe here the application of these techniques to systems based on n-Si and n-GaAs photoelectrodes. The use of nonaqueous solvents and outer sphere redox couples allows separation of the overpotential losses associated with fuel formation from losses inherent to the solid/solvent junction itself. Control over surface chemical interactions in both liquid and Schottky junctions can be attained by photoelectrochemical treatments to reduce interface recombination processes. Calculations of the theoretical upper limit on the photovoltage for a given semiconductor/liquid interface can be useful in assessing the prospects for improved current-voltage performance in response to surface modification procedures. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
