Numerical study on double-frequency TMF in Cz silicon growth

Autor:	Ch. Frank-Rotsch, Peter Rudolph, Natasha Dropka
Rok vydání:	2011
Předmět:	Materials science Silicon chemistry.chemical_element Mineralogy Crucible Micro-pulling-down General Chemistry Condensed Matter Physics Oxygen Monocrystalline silicon chemistry Free surface General Materials Science Composite material Dissolution Quartz
Zdroj:	Crystal Research and Technology. 47:299-306
ISSN:	0232-1300
Popis:	In a typical Cz set-up, the silicon melt sustained in a fused silica crucible is exposed to oxygen dissolving from the hot crucible walls. The reduction of oxygen incorporation into the growing silicon crystal poses one of the crucial challenges. Quartz dissolution rate can be minimized and SiO evaporation rate enhanced if melted silicon is exposed to double-frequency upwards travelling magnet fields (TMFs) generated within KRISTMAG® heater magnet modules (HMMs) positioned around the crucible. Our numerical results show the shift of the maximum of the Lorentz force density and consequently velocity away from the crucible walls. The obtained flow patterns can be advantageous for the oxygen control in Cz silicon growth due to accelerated transport of dissolved oxygen towards melt free surface without simultaneous enhancement of oxygen dissolution rate from the silica crucible walls. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::100c5e74a324dadf83997ef3ac3212ba https://doi.org/10.1002/crat.201100483 Zobrazit plný text záznamu Plný text